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| AOD484 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD484 is Pb-free (meets ROHS & Sony 259 specifications). AOD484L is a Green Product ordering option. AOD484 and AOD484L are electrically identical. TO-252 D-PAK Features VDS (V) = 30V ID = 25 A (VGS = 10V) RDS(ON) < 15 m (VGS = 10V) RDS(ON) < 23 m (VGS = 4.5V) UIS Tested! D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain 25 TC=25C G Current TC=100C 25 ID Pulsed Drain Current Avalanche Current C C C Units V V A A mJ W W C IDM IAR EAR PD PDSM TJ, TSTG 80 15 33 50 25 2.1 1.3 -55 to 175 Repetitive avalanche energy L=0.3mH TC=25C B Power Dissipation TC=100C TA=25C Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t 10s Steady-State Steady-State RJA RJC Typ 17 55 2.3 Max 25 60 3 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD484 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250uA, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1 80 1.5 12.1 19 18.5 26 0.71 Min 30 1 5 100 2.5 15 23 1 21 1220 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 938 142 99 1.2 17.5 8.4 3 4.1 5 12 19 6 19 10 1.8 21 VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s IF=20A, dI/dt=100A/s 21 12 A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on 25 the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper 25 dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 60 F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming 30 a maximum junction temperature of T J(MAX)=175C. 2.5 G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still1.6 environment with T A=25C. The SOA air curve provides a single pulse rating. Rev 1: Aug. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD484 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 70 60 50 ID (A) 40 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 25 20 RDS(ON) (m) 15 10 5 0 0 4 8 12 16 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=15A VGS=10V ID=20A VGS=3V 0 0 0.5 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 3.5V 5 6V ID(A) 10 125C 25C -40C 10V 8V 4.5V 20 VDS=5V 15 500 150 60 VGS=10V 40 ID=20A 35 30 RDS(ON) (m) 25 20 15 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS (A) 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics -40C 125C 25C Alpha & Omega Semiconductor, Ltd. AOD484 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=20V ID=20A Capacitance (pF) 1400 1200 1000 800 600 Coss 400 200 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 RDS(ON) limited 100.0 Power (W) ID (Amps) 10s 10.0 100s 1ms 1.0 TJ(Max)=175C, TA=25C DC 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance 10ms 40 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Ciss 8 VGS (Volts) 6 4 2 200 160 120 80 500 150 60 TJ(Max)=175C TA=25C D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD484 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 ID(A), Peak Avalanche Current 35 30 25 20 15 10 5 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) TA=150C 40 tA = L ID Power Dissipation (W) BV - V DD TA=25C 30 20 10 30 25 Current rating ID(A) 40 500 150 60 TA=25C 30 Power (W) 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 20 10 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) T 0.01 Alpha & Omega Semiconductor, Ltd. |
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